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| MSC1000M RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS .RUGGEDI .I .LOW .CLASS .P ZED VSWR :1 NPUT MATCHING THERMAL RESISTANCE A OPERATION OUT = 0.6 W MIN. WITH 10.8 dB GAIN .280 2LFL (S058) epoxy sealed ORDER CODE MSC1000M BRANDING 1000M PIN CONNECTION DESCRIPTION The MSC1000M is a Class A, common emitter transistor with an emitter ballasted Matrix geometry specifically designed for DME/IFF driver applications. This device is capable of withstanding a :1 load VSWR at any phase angle under full rated conditions. Low RF thermal resistance and semi-automatic wire bonding techniques ensure high reliability and product consistency. The MSC1000M is housed in the IMPACTM package with internal input matching. ABSOLUTE MAXIMUM RATINGS (T case = 25 C) Symbol Parameter Value Unit 1. Collector 2. Emitter 3. Base 4. Emitter PDISS IC VCE TJ TSTG Power Dissipation* Device Current* (See Safe Area) -- 300 20 200 - 65 to +150 W mA V C C Collector-Emitter Bias Voltage* Junction Temperature (Pulsed RF Operation) Storage Temperature THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* 35 C/W *Applies only to rated RF amplifier operation October 1992 1/5 MSC1000M ELECTRICAL SPECIFICATIONS (T case = 25 C) STATIC Symbol Test Conditions Value Min. Typ. Max. Unit BVCBO BVEBO BVCEO ICES hFE DYNAMIC Symbol IC = 1mA IE = 1mA IC = 5mA VCE = 28V VCE = 5V IE = 0mA IC = 0mA IB = 0mA IC = 100mA 50 3.5 20 -- 15 -- -- -- -- -- -- -- -- 1.0 120 V V V mA -- Test Conditions Value Min. Typ. Max. Unit POUT GP Note: f = 1025 -- 1150 MHz PIN = 50 mW f = 1025 -- 1150 MHz PIN = 50 mW 10Sec 1% IC VCE = 18 V VCE = 18 V 0.6 10.8 0.85 12.3 -- -- W dB = = TYPICAL PERFORMANCE Pulse Width Duty Cycle = 120mA BROADBAND POWER AMPLIFIER NARROWBAND POWER OUTPUT vs FREQUENCY MAXIMUM OPERATING AREA for FORWARD BIAS OPERATION 2/5 MSC1000M TYPICAL S-PARAMETERS S11 S22 VCE = 18 V IC = 120 mA Zg = 50 ohms S21 S12 3/5 MSC1000M TEST CIRCUIT Ref.: Dwg No. C127297 All dimensions are in inches. PACKAGE MECHANICAL DATA 4/5 MSC1000M Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 5/5 |
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